AMD this week cocked a snoot at rival Intel"s pursuit of high-k dielectric materials as the foundation for future, 45nm process technologies.
The chip maker"s own solution is a three-gate transistor design, which it discussed at this year"s IEEE International Electron Devices Meeting, held in Washington, DC. AMD also re-iterated its belief that silicon-on-insulator technology remains the best foundation for today"s chips - and tomorrow"s.
Central to the new design is the use of full-depleted SOI structures, AMD said. It detailed its work on FDSOI back in June, after announcing it was working on the technology earlier this year.