IBM has unveiled its new embedded DRAM technology, which, it promises, will help the company to improve performance of its microprocessors by up to two times and may also improve performance of various bandwidth-demanding applications, including graphics processing units (GPUs) and other multimedia chips.
"With this breakthrough solution to the processor/memory gap, IBM is effectively doubling microprocessor performance beyond what classical scaling alone can achieve," said Dr. Subramanian Iyer, distinguished engineer and director of 45nm technology development at IBM.
IBM"s new embedded dynamic random access memory (eDRAM) technology, designed in stress-enabled 65nm silicon-on-insulator (SOI) using deep trench, improves on-processor memory performance in about one-third the space with one-fifth the standby power of conventional SRAM (static random access memory), which allows to put higher amount of cache memory inside the chip or lower the costs of processors manufactured today.