SCHWALBACH, Germany - Samsung Electronics Co, Ltd. has introduced a 128-Mbit synchronous DRAM intended for graphics and networking applications based on the double data rate (DDR II) interface. The chip is capable of a data transmission frequency of 1-GHz and a data transmission rate of 32-Gbits per second, according to the company. To achieve these data rates Samsung"s 128-Mbit graphics SDRAM incorporates on-die-termination. The I/O voltage is 1.8-V and the chip is enclosed in a so-called fine-pitch ball grid array (FBGA) package.
Mass production of the 128-Mbit 1GHz DRAM is due to start some time before the end of September 2002. Samsung claims to have 40% of the graphics DRAM market and the company reckons that the introduction of the 128-Mbit device should increase its share of the graphics DRAM market to 55% by the end of 2002.