Samsung targets DDR 2 with 90nm process

Samsung has begun shifting memory production to a 90nm process, even as rival DRAM maker Infineon agreed to provide Winbond with its 90nm technology.

The South Korean giant revealed last month that it has started punching out unspecified DRAM chips at 90nm. It expects three per cent of its Q3 wafer starts to be fabbed at that node, it said.

However, it emerged this week that the company is using 90nm for its DDR 2 output, according to a DigiTimes report. Samsung will initially produce 512Mb DDR 2 parts clocked at 400, 533 and 667MHz at 90nm, it was claimed.

Q4 is set to see Samung using 90nm of five per cent of its wafer starts, with mass production following in 2005.

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