Samsung today has introduced the fourth generation of Universal Flash Storage (UFS) 4.0. The new NAND flash storage will enable speeds of up to 4,200MB/s which is double that of last gen UFS 3.1.
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New automotive memory solutions introduced by Samsung Electronics support complex processing of multimedia applications and autonomous driving data, and are currently in mass production.
Samsung has begun producing its new 512GB memory chip based on the embedded Universal Flash Storage 3.0 specification, with up to 2,100Mbps of read rate and sequential write speed as fast as 410Mbps.
Having released 512GB embedded Universal Flash Storage chips a bit over a year ago, Samsung has delivered an industry first 1TB part designed for use in "next-generation mobile applications".
Rumors of a device codenamed Cheza point to an ARM-powered Chromebook which could have eSIM support for Project Fi and dual-lane UFS storage technology, more commonly found in high-end smartphones.
Aimed at "next-generation premium smartphones" Samsung announced that its new 512GB embedded UFS storage chip has gone into production, which could potentially appear inside the anticipated Galaxy S9.
Despite a distinct lack of device support, Samsung has become the first flash memory manufacturer to unveil removable Universal Flash Storage cards offering fast speeds and capacities up to 256GB.
