Samsung has introduced an extensive lineup of automotive memory solutions that have been built for next-generation autonomous electric vehicles. For autonomous driving systems, the new lineup brings 128GB Universal Flash Storage (UFS) and 2GB GDDR6 DRAM, and for high-performance infotainment systems, it includes 2GB DDR4 DRAM, 2GB GDDR6 DRAM, and a 256GB PCIe Gen3 NVMe ball grid array (BGA) SSD.
Samsung's Executive Vice President and Head of Memory Global Sales and Marketing, Jinman Han stated:
With the recent proliferation of electric vehicles and the rapid advancement of infotainment and autonomous driving systems, the semiconductor automotive platform is facing a paradigm shift. What used to be a seven to eight-year replacement cycle is now being compressed into a three to four-year cycle, and at the same time, performance and capacity requirements are advancing to levels commonly found in servers. Samsung’s reinforced lineup of memory solutions will act as a major catalyst in further accelerating the shift toward the ‘Server on Wheels’ era.
The 256GB BGA SSD controller and firmware provide a sequential read speed of 2,100MB/s and a sequential write speed of 300MB/s. The 2GB GDDR6 DRAM supports up to a 14 Gbps data rate per pin. The tech giant's latest automotive solutions comply with the global automotive reliability standard, the AEC-Q100 qualification, that enables them to "operate stably in extreme temperatures ranging from -40 degrees Celsius to +150 degrees Celsius".
Currently, the latest automotive memory products are in mass production following the completion of customer evaluations.
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